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	Light emitting semiconductor device
	MORI MITSUHIRO; ONO YUUICHI; ITOU KAZUHIRO; KAWADA MASAHIKO; NAKAMURA HITOSHI; KURATA KAZUHIRO
	1984-10-25
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1984188182A
国家	日本
文献子类	发明申请
其他题名	Light emitting semiconductor device
英文摘要	PURPOSE:To suppress the current extension of a light emission and to reduce the thermal resistance of an element by providing a low resistance layer which is larger in area of the portion opposed to an active layer than the semiconductor portion which is contacted with a substrate side electrode. CONSTITUTION:An N type active layer (N or P type), P type and N type crystalline layers 22, 23, 24, 25 are continuously formed on the crystal layer (N type conductive layer) 21 having a light transmitting wide fobidden band width. A P type layer 26 is formed by diffusing Zn or Cd, and a P type 261 is formed by a lateral abnormal diffusion. P type of substrate side and N type ohmic electrodes 271, 272 of light emitting side, internal light emitting window 28 are formed, and an optical fiber is mounted at this portion. A current is flowed through 26 to the layer 23, and the 231 becomes the light emitting region. Since the electrode 271 has a large contact region, the contacting resistance can be reduced. When the light emitting diode is energized forwardly, the P-N junction is biased reversely, and the extension of the current can be prevented without using an insulating film.
公开日期	1984-10-25
申请日期	1984-03-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80259]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	MORI MITSUHIRO,ONO YUUICHI,ITOU KAZUHIRO,et al. Light emitting semiconductor device. JP1984188182A. 1984-10-25.

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