Semiconductor laser element | |
UMEDA JIYUNICHI; SHIMADA JIYUICHI; NAKAMURA MICHIHARU; KATAYAMA YOSHIFUMI; KAJIMURA TAKASHI; YAMASHITA SHIGEO | |
1983-09-16 | |
著作权人 | HITACHI SEISAKUSHO KK |
专利号 | JP1983155789A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element |
英文摘要 | PURPOSE:To increase an optical output limit largely by forming a coating film using an amorphous silicon film as one of its constitutional materials. CONSTITUTION:The titled element is a semiconductor laser one having double- hetero structure, and a positive electrode 1, a P type Ga1-xAlxAs crystalline layer 2, an N type or P type Ga1-yAlyAs crystalline layer 3 as an active layer and an N type Ga1-sAls crystalline layer 4 are formed to the element. Laser lights emitted from the active layer 3 interfere in reflected light from the interface between an amorphous film 6 and air, and changed into th nodes of standing waves in the interface between the active layer 3 and the film 6, and luminous intendity reduces remarkably. When a refractive index of the film is defined as n, luminous field intensity in the interface reaches 1/n as compared to the condition when there is no film and when film thickness is lambda/2. Accordingly, the optical output limit can be increased largely while minimizing the rise of the threshold current value of the semiconductor laser element. |
公开日期 | 1983-09-16 |
申请日期 | 1983-02-28 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/79394] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI SEISAKUSHO KK |
推荐引用方式 GB/T 7714 | UMEDA JIYUNICHI,SHIMADA JIYUICHI,NAKAMURA MICHIHARU,et al. Semiconductor laser element. JP1983155789A. 1983-09-16. |
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