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	単一軸モード半導体レーザ
	水戸 郁夫
	1994-04-27
著作权人	NIPPON ELECTRIC CO
专利号	JP1994032322B2
国家	日本
文献子类	授权发明
其他题名	単一軸モード半導体レーザ
英文摘要	PURPOSE:To increase the reliability and the yield in manufacture by a method wherein a buffer layer of the first conductivity type, an active layer, and a clad layer of the second conductivity type are provided on a semiconductor substrate, and the buffer layer and the active layer are formed by isolation by a region on an optical guide layer and the other region. CONSTITUTION:The non-doped InGaAsP wave guide layer 5 is laminated on the N type InP substrate 1 of the orientation of a plane (001), a periodical structure 20 parallel with the direction of (110) is formed thereon, and thereafter the right side of a stepwise difference 10 is etched with Br-methanol. Next, the N type InP buffer layer 2 and the non-doped InGaAs active layer 3 are laminated, and the P type InP clad layer 4 and a P type InGaAs cap layer 6 are laminated. After forming an SiO2 insulation film 30 thereon and exfoliating the insulation film 30 at the part of a current injected region 31, a P side metallic electrode 32 of an Au-Zn is formed. An N side metallic electrode 33 of an Au-Ge-Ni is formed on the N side.
公开日期	1994-04-27
申请日期	1982-10-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78820]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	水戸 郁夫. 単一軸モード半導体レーザ. JP1994032322B2. 1994-04-27.

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