| Semiconductor light-emitting device | |
| IMAI HAJIME | |
| 1983-10-28 | |
| 著作权人 | FUJITSU KK |
| 专利号 | JP1983184761A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To remove the earthing condition under which the light-emitting device heretofore in use was restricted in its circuit constitution by a method wherein the active part of the semiconductor light-emitting device is electrically isolated from package. CONSTITUTION:A P type InP layer 2 and a semiconductive InP layer 3 are grown on an InP substrate 1, and a groove is formed by performing an etching. Then, a P type InP first clad layer 5 and an InGaAsP active layer 6 are formed. Subsequently, an N type InP second clad layer 7 is formed on the whole surface, and a high resistance region 8 and a high impurity density region 9 are formed. Then, an insulating film 10 to be used for protection of semiconductor surface is formed, an aperture part is provided by selectively removing the film 10, and an N type electrode 12 and a P type electrode 12 are formed. |
| 公开日期 | 1983-10-28 |
| 申请日期 | 1982-04-23 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78426]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME. Semiconductor light-emitting device. JP1983184761A. 1983-10-28. |
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