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	Semiconductor luminescent device
	TANAHASHI TOSHIYUKI
	1985-12-23
著作权人	FUJITSU KK
专利号	JP1985260182A
国家	日本
文献子类	发明申请
其他题名	Semiconductor luminescent device
英文摘要	PURPOSE:To lower the threshold current and to raise the efficiency by a method wherein the semiconductor luminescent device is made into such a structure that current is concentratedly run to the active region utilizing a difference of resistivity. CONSTITUTION:An N type InP layer 2 and a P type InP layer 8 are deposited on an N type InP layer 1 having a striped protrusion, covering the striped protrusion with the layers 2 and 8 and as a semiconductor layer having a resistivity higher than that of the N type InP layer A V-shaped groove 6 is carved in the P type InP layer 8 on the striped protrusion in such a way as to reach into the N type InP layer This semiconductor luminescent device is made into a structure, wherein an N type InP layer 7, an InGaAsP layer to be used as an active layer 3 and a P type InP layer 4 are deposited in this groove. The light emission is performed by a double hetero-junction, which is constituted holding the active layer 3, which is the InGaAsP layer, between the N type InP layer 7 and the P type InP layer 4. In such a structure, current concentration to the active region is good, and furthermore, the stopping of leakage current in parts other than the active region can be performed by a P-N junction, which is formed of the N type InP layer 7 and the P type InP layer 8.
公开日期	1985-12-23
申请日期	1984-06-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78339]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	TANAHASHI TOSHIYUKI. Semiconductor luminescent device. JP1985260182A. 1985-12-23.

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