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	光半導体装置
	茂木 直人; 平原 奎治郎
	1998-07-17
著作权人	株式会社東芝
专利号	JP2804093B2
国家	日本
文献子类	授权发明
其他题名	光半導体装置
英文摘要	PURPOSE:To obtain a high grade crystal structure which is low in crystal defects by forming a II-VI compound semiconductor layer on a III-V compound semiconductor having the composition ratio of Al that is more than the prescribed rate; besides, forming pn junction at the II-VI compound semiconductor layer. CONSTITUTION:First of all, a II-VI compound semiconductor layer containing n-type (or p-type) impurities performs an epitaxial growth with an MOCVD process and the like, for example, at a temperature higher than 620 deg.C on a III-V compound semiconductor having the composition ratio of Al that is 0.15 or more. Subsequently, p-type (or n-type) impurities are either diffused or ion-implanted on the II-VI compound semiconductor layer containing the n-type (or p-type) impurities or the II-VI compound semiconductor layer containing the p-type (or n-type) impurities performs the epitaxial growth with the MOCVD process and the like. Then, the II-VI compound semiconductor layer having pn junction is formed at the III-V compound semiconductor with either methods as mentioned above, and then a photosemiconductor device is manufactured. If the composition ratio of Al is 0.15 or less, a II-VI compound semiconductor which is superior in a crystalline character is not formed on the occasion of making the II-VI compound semiconductor grow on the III-V compound semiconductor containing Al.
公开日期	1998-09-24
申请日期	1989-06-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78152]
专题	半导体激光器专利数据库
作者单位	株式会社東芝
推荐引用方式 GB/T 7714	茂木 直人,平原 奎治郎. 光半導体装置. JP2804093B2. 1998-07-17.

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