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	Semiconductor light-emitting element
	TANAKA TOSHIAKI
	1986-03-06
著作权人	TOSHIBA CORP
专利号	JP1986046085A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting element
英文摘要	PURPOSE:To discriminate the projection side and reverse side of laser beams easily, to improve yield and to enable the avoidance, etc. of dispersions among pellets by forming electrodes on at least one surface in patterns having different shapes on the projection end surface side and reverse end surface side of light-beams. CONSTITUTION:The N type electrode side is formed through a photoetching method as repeated pattern 32, 33, which are sufficiently finer than pellet width W and have mutually different shapes, in the direction orthogonal to the stripe direction. A cleavage is conducted from the N type electrode side by using the pattern 32. Consequently, an N-side electrode is formed in structure of patterns 34, 35 each different on the projection end surface side and reverse end surface side of light-beams, thus allowing work while a projection surface and a reverse surface having different coating-film thickness are discriminated easily through visual observation when the semiconductor layer is mounted to a heat sink, etc. while the surface of the N type electrode is directed upward. Accordingly, workability and yield are improved while the displacement of the electrode patterns can be avoided, thus obtaining an element having high reliability.
公开日期	1986-03-06
申请日期	1984-08-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78055]
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	TANAKA TOSHIAKI. Semiconductor light-emitting element. JP1986046085A. 1986-03-06.

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