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	Semiconductor laser
	SHONO MASAYUKI
	1991-12-06
著作权人	SANYO ELECTRIC CO LTD
专利号	JP1991276687A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To change-over gradually group V gas in a third layer and to suppress the generation of a crystal defect in each growth layer to be formed after the group V gas is changed-over by a method wherein the third layer, which is constituted of group V elements of As and P, is provided between a first layer, which is constituted of a group V element of As, and a second layer which is constituted of a group V element of P. CONSTITUTION:A first buffer layer 2 consisting of an N-type GaAs, a second buffer layer 3 consisting of an N-type Ga1-xInxAsyP1-y, a third buffer layer 4 consisting of an N-type Ga0.48In0.52P, an N-type clad layer 5 consisting of an N-type AlGaInP, an active layer 6 consisting of an undoped GaInP, a P-type clad layer 7 consisting of a P-type AlGaInP, a contact layer 8 consisting of a P-type GaInP and a cap layer 9 consisting of a P-type GaAs are epitaxially grown continuously and in that order on one main surface of a substrate At this time, the layer 3 is changed its composition from the side of the layer 2 by changing gradually the amount of supply of each raw gas and is formed.
公开日期	1991-12-06
申请日期	1990-03-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77896]
专题	半导体激光器专利数据库
作者单位	SANYO ELECTRIC CO LTD
推荐引用方式 GB/T 7714	SHONO MASAYUKI. Semiconductor laser. JP1991276687A. 1991-12-06.

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