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	Optical IC
	NAKAO ICHIRO
	1986-03-01
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1986042982A
国家	日本
文献子类	发明申请
其他题名	Optical IC
英文摘要	PURPOSE:To contrive yield improvement and speed-up by a method wherein a semiconductor laser and a bi-polar transistor are integrated on the same substrate at a time of epitaxial growth without an interposal of other processes between multilayer epitaxial growths. CONSTITUTION:The title device is composed of a semi-insulation InP substrate 21, an N-InP clad layer 22, an N-InGaAsP active layer 23, an N-InP clad layer 24, a P-InP layer 25, and an N-InP layer 26. The semiconductor laser part L is made of a Zn-doped region 27 and constructs a laser of such a type that current flows as shown by broken lines 30 and that the clad layers 22 and 24 confine light and current, resulting in oscillation at the interface of the P type Zn diffused region 27 in the active layer 23. The electric element part T is made of an emitter layer 26, a base layer 25, and collector layers 22, 23, and 24, thus constructing a hetero bi-polar transistor. Since this construction enables the semiconductor laser and the electric element to be integrated at a time of epitaxial growth, this device can be speeded up with good yield and the reduction in collector resistance.
公开日期	1986-03-01
申请日期	1984-08-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77659]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	NAKAO ICHIRO. Optical IC. JP1986042982A. 1986-03-01.

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