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	Semiconductor laser
	NAGAI YUTAKA; IKEDA KENJI
	1991-05-24
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991123092A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To make a laser oscillation stabilized in a certain region and to protect a semiconductor laser against filamentation by a method wherein a partial high reflective film is provided in the regions concerned, which extend in the width direction of an active region, on the end face of a resonator where a low reflective film has been formed. CONSTITUTION:A P-type Al0.5Ga0.5As clad layer 2 is arranged on a P-type GaAs substrate An undoped Al0.1Ga0.9As active layer 3 is provided onto the P-type clad layer 2. An N-type Al0.5Ga0.5As clad layer 4 is deposited on the active layer 3. An N-type GaAs contact layer 5 is laid on the N-type clad layer 4. An SiO2 insulating film 6 is partially provided in the contact layer 5. An N electrode 7 is formed on the contact layer 5 and the insulating film 6, and a P electrode 8 is formed on the rear side of the substrate The end face of a resonator located at the front of a semiconductor laser is entirely covered with a low reflective film 10, and high reflecting films 9 are partially formed thereon. Therefore, laser oscillation starts centering on the regions where the partial high reflective films 9 are provided. By this setup, a semiconductor laser of this design is protected against filamentation, and an active layer is made uniform in light emission.
公开日期	1991-05-24
申请日期	1989-10-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77452]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI YUTAKA,IKEDA KENJI. Semiconductor laser. JP1991123092A. 1991-05-24.

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