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	Liquid phase epitaxial growth method
	MORIMOTO TAIJI; HOSODA MASAHIRO; HAYASHI HIROSHI; YAMAMOTO SABURO
	1986-10-02
著作权人	SHARP CORP
专利号	JP1986222124A
国家	日本
文献子类	发明申请
其他题名	Liquid phase epitaxial growth method
英文摘要	PURPOSE:To thin the transition region of a mixed crystal ratio, and to improve performance characteristics by passing a substrate for growth brought into contact with a melting liquid for growth into an unsaturated melting liquid having composition variation different from the next melting liquid for growth once immediately before the substrate is transported into the next melting liquid for growth. CONSTITUTION:When epitaxial layers having different mixed crystal ratios are grown and shaped on a substrate 10 in multilayers, the substrate is passed through unsaturated melting liquids 3 having the compositions of larger mixed crystal ratios once when the epitaxial layer having the mixed crystal ratio larger than the epitaxial layer as a foundation layer is grown. When the epitaxial layer having the small mixed crystal ratio is grown, on the contrary, the substrate is passed through the unsaturated melting liquids 31, 32 having the compositions of the smaller mixed crystal ratios once. Accordingly, regions, in which the mixed crystal ratios gradually change, on the interfaces of epitaxial growth layers 11-13 can be thinned to approximately 50-100Angstrom , thus manufacturing a semiconductor element having excellent performance characteristics.
公开日期	1986-10-02
申请日期	1985-03-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77288]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	MORIMOTO TAIJI,HOSODA MASAHIRO,HAYASHI HIROSHI,et al. Liquid phase epitaxial growth method. JP1986222124A. 1986-10-02.

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