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	Semiconductor laser
	YANASE TOMOO; SUGAO SHIGEO
	1987-08-06
著作权人	NEC CORP
专利号	JP1987179194A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To facilitate oscillation with a high efficiency by blocking a leakage current which does not flow through an active layer by high resistance current blocking layers. CONSTITUTION:An active region 11 is held between high resistance current blocking layers 15 which are buried in two V-grooves and is provided in a bank 20 of an inverse V-shape. The top end part of the inverse V-shape bank 20 is contacted with a V-shape current flow layer 16. Therefore, a current which is made to flow by a voltage applied between a P-type electrode 19 and an N-type electrode 18 flows from the current flow layer 16 into the active region 11 selectively and the oscillation with very little leakage current and a high efficiency is realized. As the P-type electrode 19 is covered with an SiO2 insulating layer 17 except a stripe part above the active layer, the voltage is applied to the P-N junction of the active region 11 part only so that a capacitance induced by the high junction can be less than 2pF and speed modulation can be achieved.
公开日期	1987-08-06
申请日期	1986-01-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77220]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YANASE TOMOO,SUGAO SHIGEO. Semiconductor laser. JP1987179194A. 1987-08-06.

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