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	Semiconductor laser
	HORIE, HIDEYOSHI
	2010-09-07
著作权人	MITSUBISHI CHEMICAL CORPORATION
专利号	US7792170
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser
英文摘要	A semiconductor laser having an oscillation wavelength λ (nm) and comprising at least a substrate, a first-conduction-type clad layer having an average refractive index N1cld, an active layer structure having an average refractive index NA, and a second-conduction-type clad layer having an average refractive index N2cld. This has a first-conduction-type subwave guide layer having an average refractive index N1SWG between the substrate and the first-conduction-type clad layer, and has a first-conduction-type low-refractive-index layer having an average refractive index N1LIL between the subwaveguide layer and the substrate. In this, the refractive indexes satisfy specific relational formulae. The semiconductor laser has a stable oscillation wavelength against the change of current/light output/temperature.
公开日期	2010-09-07
申请日期	2005-03-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77132]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CHEMICAL CORPORATION
推荐引用方式 GB/T 7714	HORIE, HIDEYOSHI. Semiconductor laser. US7792170. 2010-09-07.

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