QQ客服 官方微博 反馈留言

	Semiconductor laser
	IWANE GANZO; NAKANO YOSHINORI; FUJITA OSAMU
	1986-04-11
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1986070778A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser having a small deterioration rate and excellent responding properties at high speed by forming partially forming removing sections not only to a section just above an active waveguide but also other sections in an insulating film. CONSTITUTION:Removing sections 12 represent removing sections in an insulating film 11, and a section 12a represents a current constriction section with no insulating film in a section just above an active waveguide section and sections 12b-12n each insulating-film removing sections. The insulating-film removing sections 12 are arranged linearly in parallel along the active waveguide 3 at mutually regular intervals. The insulating film expands by heat generated regular intervals. The insulating film expands by heat generated during the operation of a laser, but strain having effects on the active waveguide 3 and the interface between the active waveguide 3 and a buried layer is reduced when the insulating film is removed in not only the section just above the active waveguide section but also in other sections.
公开日期	1986-04-11
申请日期	1984-09-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77062]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	IWANE GANZO,NAKANO YOSHINORI,FUJITA OSAMU. Semiconductor laser. JP1986070778A. 1986-04-11.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。