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	半導体レーザ
	佐々木 達也
	1996-08-22
著作权人	日本電気株式会社
专利号	JP2550729B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ
英文摘要	PURPOSE:To obtain a semiconductor laser which is high in operational speed, small in leakage current, and large in optical output by a method wherein an active layer is formed of a multi-quantum well structure, and a resonator is 400mum or more in length. CONSTITUTION:As a leakage current IL flowing from a P-type InP clad layer 4 to a high resistance InP current block layer 6 is made to increase in an exponential function manner to a voltage applied to a junction, if the resistance Rm of the P-type InP clad layer 4 is large, a voltage applied to the junction becomes high, so that the leakage current IL is liable to increase. Then, when the active layer 3 is formed in a quantum well structure so as to be small in absorption loss, a semiconductor laser of this design is hardly increased in leakage current even if a resonator is made large in length as compared with a semiconductor laser whose active layer is of bulk. Therefore, a high resistance buried laser can be decreased in element resistance by enlarging an active layer in area. By this setup, as a high resistance buried LD can be decreased in leakage current, its optical output is free of saturation and maximum optical output becomes high. A high operation speed owing to a buried high resistor can be also attained.
公开日期	1996-11-06
申请日期	1989-12-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76641]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	佐々木 達也. 半導体レーザ. JP2550729B2. 1996-08-22.

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