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	Semiconductor light emitting element and manufacture thereof
	MURAKAMI TOMOKI
	1992-10-21
著作权人	NEC CORP
专利号	JP1992297082A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting element and manufacture thereof
英文摘要	PURPOSE:To improve productivity by reducing once an epitaxially growing step. CONSTITUTION:After an epitaxially grown layer is formed on a high resistance substrate 1 formed with a recess, part of the substrate 1 is removed to form an electrode 5 on a surface of the layer formed in the recess, and a semiconductor light emitting element of a structure using a high resistance layer as a block layer can be manufactured in one epitaxially growing step, thereby improving productivity.
公开日期	1992-10-21
申请日期	1991-01-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76435]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	MURAKAMI TOMOKI. Semiconductor light emitting element and manufacture thereof. JP1992297082A. 1992-10-21.

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