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	半導体装置の製造方法
	岡崎 二郎
	1999-04-30
著作权人	富士通株式会社
专利号	JP2921925B2
国家	日本
文献子类	授权发明
其他题名	半導体装置の製造方法
英文摘要	PURPOSE:To prevent leakage without fail by laminating an upper stage part having narrower width than a mesa lower stage part on the mesa lower stage part to form a mesa having a stepped width, and leaving an n type InP layer only on the mesa lower stage part and removing the same of a part other than the left part. CONSTITUTION:A lower substrate 10 is formed by covering a P type InP substrate with an active layer 9, and thereafter a striped mask layer 5 is formed. There is formed a mesa 6 of a narrower width than a mesa lower stage part 2 on the just-mentioned part 2 by etching the cladding layer 4, the active layer 3, and the contact layer 9 using an etching solution of a smaller side etching rate. Then, opposite side regions of the mesa 6 on the lower substrate 10 is buried with an n type InP layer 7 up to the lower end of the striped mask layer 5, and the n type InP layer 7 is etched with part of the n type InP layer 7 left behind on the lower substrate 1 on opposite sides of a protrusion part 2 and with the other part of the n type InP layer 7 being removed. Further, the opposite side regions of the mesa 6 on the lower substrate 10 is buried with a high resistance i type InP layer 8 up to the lower end of the striped mask 5.
公开日期	1999-07-19
申请日期	1990-06-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76430]
专题	半导体激光器专利数据库
作者单位	富士通株式会社
推荐引用方式 GB/T 7714	岡崎 二郎. 半導体装置の製造方法. JP2921925B2. 1999-04-30.

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