QQ客服 官方微博 反馈留言

	Manufacture of semiconductor light-emitting element
	OKAZAKI JIRO
	1986-07-12
著作权人	FUJITSU LTD
专利号	JP1986154091A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor light-emitting element
英文摘要	PURPOSE:To ensure the use for a prolonged term by forming an InGaAsP contact layer, on the surface of which In particles do not adhere. CONSTITUTION:A laminated semiconductor layer is grown through a liquid phase epitaxial growth method, and a P-type InGaAsP contact layer 7 is grown in thickness of approximately 0.5mum after the growth of a layer such as a P-type InP clad layer 6 in the same manner as conventional devices, but an InP cover layer 11 is grown in thickness of approximately 0.5mum successively without completing laminating growth at that time. Consequently, the generation of In particles 10 which have adhered on the contact layer 7 can be transferred onto the cover layer 11, and the interface on which there is no In particle 10 is shaped between the contact layer 7 and the cover layer 1 The surface of the cover layer 11 is washed by a mixed liquid in which HF and HNO3 are mixed at the rate of 1: In is easy to dissolve and InP is difficult to dissolve to the mixed liquid, thus selectively removing In particles adhering on the cover layer 1 The cover layer 11 is removed through etching, thus completing the formation of the contact layer 7.
公开日期	1986-07-12
申请日期	1984-12-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76317]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	OKAZAKI JIRO. Manufacture of semiconductor light-emitting element. JP1986154091A. 1986-07-12.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。