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	Semiconductor laser
	TANAKA HIDENAO; ASAHI HAJIME
	1987-02-02
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1987024681A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To reduce the thermal resistance of a clad layer without deteriorating the light confinement and improve heat radiation to unnecessitate forced cooling and obtain an InGaAlP semiconductor laser facilitating continuous oscillation of a low current at the room temperature by specifying the thickness of an InGaAlP activation layer and the thickness of the InGaAlP clad layer of the heat sink side. CONSTITUTION:The thickness of an InGaAlP activation layer 13 is selected to be 0.1-0.3mum and the thickness of an InGaAlP clad layer 12 of the heat sink 19 side is selected to be 0.8-0.3mum. For instance, after the N-type In0.49 Ga0.31Al0.20P clad layer 12, the In0.49Ga0.51P activation layer 13, a P-type In0.49 Ga0.31Al0.20P clad layer 14 and a P-type GaAs cap layer 15 are successively formed to the thicknesses of 0.5mum, 0.2mum, 0.5mum and 1mum respectively on an N-type GaAs substrate 11 by a molecular beam epitaxial method, an SiO2 film 16, a P-type electrode 17 and an electrode 18 are formed and then an SiO2 stripe laser with a stripe width of 5mum and a resonator length of 200mum is obtained by cleaving and mounted on the heat sink 19.
公开日期	1987-02-02
申请日期	1985-07-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75700]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	TANAKA HIDENAO,ASAHI HAJIME. Semiconductor laser. JP1987024681A. 1987-02-02.

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