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	Semiconductor laser device
	SAKANO SHINJI; TSUJI SHINJI; OISHI AKIO; INOUE HIROAKI; HIRAO MOTONAO; MATSUMURA HIROYOSHI
	1988-03-18
著作权人	HITACHI LTD
专利号	JP1988062388A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a narrow spectral state at an arbitrary oscillating wavelength, by receiving part of laser output light, and controlling the optical length of an external cavity so that said output becomes constant. CONSTITUTION:An external cavity 2 and a semiconductor laser 1 have an optical waveguide 10. In the external cavity 2, the optical length can be changed by the application of a current or a voltage from a variable power source 4. Light, which is reflected by the end surface of the external cavity 2, is returned to the semiconductor laser The width of the spectral line is narrowed at a suitable phase. Part of the light emitted from the semiconductor laser 1 is split through a beam splitter 6 and reaches a photodetector 8. The signal from the photodetector 8 is compared with preset power in a control part 9. The difference is fed back to the power source 4 for the external cavity. The optical length in the external cavity 2 is adjusted to the optical length so that the preset power of the semiconductor laser is obtained. Thus, the width of the stable, narrow spectral line is obtained.
公开日期	1988-03-18
申请日期	1986-09-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75543]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	SAKANO SHINJI,TSUJI SHINJI,OISHI AKIO,et al. Semiconductor laser device. JP1988062388A. 1988-03-18.

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