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	Semiconductor laser
	FUJII HIROAKI
	1991-04-15
著作权人	NEC CORP
专利号	JP1991089580A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To produce refractive index change induced by an elastic surface wave in a light emitting part to enable suppression of return light noise accompanied by the lowering of coherency by providing the light emitting part for the laser oscillation and an elastic surface wave generating part for injecting the elastic surface wave into the light emitting part. CONSTITUTION:In a light emitting part 100, a GaAs active layer 110 is sandwiched between and laminated with AlGaAs clad layers 115, 120, and all are buried in AlGaAs block layers 135, 140 except a stripe-shaped current injecting part. An elastic surface wave generating part 105 consists of an elastic wave generating part in the rear surface of the substrate and an elastic surface wave converting part in the front surface of the substrate. In the elastic wave generating part, a ZnO film, which is a piezo-electric material, is sandwiched between two electrodes 165, 170, and a microwave for generating the elastic surface wave is applied to these two electrodes. The elastic surface wave converting part consists of recessed and projecting parts having a period of 6mum, and the elastic wave generated by the elastic wave generating part in the rear surface is converted to the elastic surface wave by a grating 155 and led to the light emitting part 100.
公开日期	1991-04-15
申请日期	1989-08-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74856]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	FUJII HIROAKI. Semiconductor laser. JP1991089580A. 1991-04-15.

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