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	Semiconductor diode construction
	-
	1967-08-09
著作权人	NATIONAL RESEARCH DEVELOPMENT CORPORATION
专利号	GB1079033A
国家	英国
文献子类	授权发明
其他题名	Semiconductor diode construction
英文摘要	1,079,033. Semi-conductor laser diode. NATIONAL RESEARCH DEVELOPMENT CORPORATION. June 4, 1964 [June 5, 1963], No. 22457/63. Headings H1C and H1K. Molybdenum stud heat sink 4 is provided with a conductive layer of gold and zinc and secured to the P-type region 1 of a laser diode while molybdenum stud heat sink 5 is provided with a conductive layer of gold and tin and secured to the N-type region 2. The diode which may be of gallium arsenide or phosphide is gold plated 6 around the base of each stud to within 100Á of the junction 3 which is left free. The sides of the diode are coated one at a time, a wire being used to cover up the N-P junction. The wire is accurately located by passing current through the diode so that it emits radiation from the junction and positioning the wire between the junction and a silicon photo-cell so as to cut-off completely the radiation to the photo-cell. The plating improves heat flow from the junction.
公开日期	1967-08-09
申请日期	1963-06-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74642]
专题	半导体激光器专利数据库
作者单位	NATIONAL RESEARCH DEVELOPMENT CORPORATION
推荐引用方式 GB/T 7714	-. Semiconductor diode construction. GB1079033A. 1967-08-09.

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