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	Semiconductor laser
	SHIMADA KATSUTO
	1988-04-14
著作权人	SEIKO EPSON CORP
专利号	JP1988084085A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To be free from loss of light by curving an active layer by forming a stripe in an inverted mesa and confining light beams only near the center of the inverted mesa section of the active layer. CONSTITUTION:An n-type GaAs current constriction layer 2 is shaped onto a p-type GaAs substrate 1, a!ld a stripe is formed so that a cross section is shaped in an inverted mesa through etching. A p-type GaAs buffer layer 3, a p-type AlGaAs clad layer 4, a non-doped GaAs active layer 5, an n-type AlGaAs clad layer 6 and an n-type GaAs contact layer 7 are formed in succession again. the surface not crystal-grown in the substrate 1 is polished, Au-Zn/Au and Ni/Au-Ge /Au are each evaporated to the substrate 1 and the contact layer 7. and a p side electrode 8 and an n side electrode 9 are shaped through alloying by heating.
公开日期	1988-04-14
申请日期	1986-09-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74486]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	SHIMADA KATSUTO. Semiconductor laser. JP1988084085A. 1988-04-14.

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