Manufacture of semiconductor laser | |
MAKIUCHI MASAO | |
1986-10-08 | |
著作权人 | FUJITSU LTD |
专利号 | JP1986226988A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser |
英文摘要 | PURPOSE:To improve reproducibility by forming a silicon nitride film to sections except a forming position for an optical waveguide for a resonator on a semiconductor substrate, growing a compound semiconductor layer and growing a polycrystalline semiconductor layer on silicon nitride and a single crystal semiconductor layer in an exposed section of the semiconductor substrate. CONSTITUTION:An N-GaAs buffer layer 2, an N-AlGaAs clad layer 3, a quantum well active layer 4 and P-AlGaAs are formed onto a semi-insulating GaAs substrate 1 in succession through a MBE method. An Si3N4 film 6 is shaped, an opening 7 is shaped through photolithography, and P-AlGaAs is grown by using the MBE method. A growth layer is changed into a polycrystal on Si3N4 6 and a P-AlGaAs polycrystal 8 is formed, and P-AlGaAs 10 consisting of a single crystal is grown in an exposed section of the crystal plane of the opening 7. A P-GaAs polycrystal 9 and a single crystal 11 are formed for a contact, and an electrode metal 12 being in ohmic-contact with P-GaAs 11 is shaped, thus acquiring element-section structure. Accordingly, a semiconductor laser at a single transverse mode having a low threshold and high efficiency can be shaped with excellent reproducibility and yield. |
公开日期 | 1986-10-08 |
申请日期 | 1985-03-30 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/74255] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | MAKIUCHI MASAO. Manufacture of semiconductor laser. JP1986226988A. 1986-10-08. |
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