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	Optical semiconductor device
	SODA HARUHISA
	1991-09-12
著作权人	FUJITSU LTD
专利号	JP1991209789A
国家	日本
文献子类	发明申请
其他题名	Optical semiconductor device
英文摘要	PURPOSE:To realize an optical semiconductor device which is less in power consumption, has no polarization dependency, and can be manufactured easily by optically exciting an optical amplification layer with laser light emitted from a laser activation layer so that the input light from the end face of the amplification layer can be amplified and output light can be emitted from the other edge. CONSTITUTION:After a guide layer 3, laser activation layer 4, clad layer 5 acting as a separation layer, optical amplification layer 6, and clad layer 7 are successively formed on a diffraction grating 2, mesa-etching is performed. The parts removed by mesa-etching are filled up with successively formed p-InP buried layer 8, n-InP buried layer 9, and p-InP buried layer 10. A cap layer 11 is formed on the p-InP clad layer 7 and p-InP buried layer 10. The edge to which light is made incident and the other edge from which light is emitted are coated with nonreflective coats. Ti/Pt/Au is thermo-bonded to the surface of the cap layer 1 The Ti/Pt/Au becomes a p- electrode which also acts as a reflecting mirror 13 and reflects excitation light which has not been absorbed by the optical amplification layer 6, but passed, and sends the reflected light back to the layer 6. An n-electrode 14 is formed below the n-InP substrate 1 of this device by vapor deposition of AuGe.
公开日期	1991-09-12
申请日期	1990-01-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74216]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	SODA HARUHISA. Optical semiconductor device. JP1991209789A. 1991-09-12.

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