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	IMANAKA KOICHI; KAWAI YOSHIO
	1991-04-22
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1991028840B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain bistability of a bistable semiconductor laser diode at room temperature without influence of the temperature in the injection current vs. light output characteristic by reducing the threshold current and bias power by alternately forming an exciting region and saturable adsorbing region in a resonator direction, controlling the injection of the current to the saturable absorption region and controlling the density of the optical absorption center. CONSTITUTION:A P type InP clad layer 12, an InGaAsP active layer 13, an N type InP clad layer 14 are grown on a P type InP substrate 11, and the upper surface side of the layer 12, the layers 13, 14 are removed in length direction at the prescribed interval at both sides. An N type InP block layer 15 and a P type InP enclosure layer 16 are sequentially grown on the removed parts. Then, when current is injected from the overall electrodes, electron-hole recombination occurs to produce laser oscillation in the exciting region ( I ), and oscillates in Fabry-Perot mode. When the reflecting light passes through the quasi-exciting region (II) in the resonator, the absorption center of the region (II) becomes saturated absorption state, thereby obtaining bistable characteristics.
公开日期	1991-04-22
申请日期	1982-08-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74080]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	IMANAKA KOICHI,KAWAI YOSHIO. -. JP1991028840B2. 1991-04-22.

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