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	Semiconductor laser
	HATTORI AKIRA; YAMASHITA KOJI
	1988-04-30
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988099589A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To relieve concentration of internal stress to an active layer and mismatching in lattice, by providing, between the active layer and a clad layer, a relaxation layer consisting of a material having an intermediate lattice constant between those of the active layer and a clad layer and having a thickness smaller than the thin film of the active layer. CONSTITUTION:A semiconductor laser is provided by AlxGa1-xAs crystal layer while both of relaxation layers 4 and 5 have a thickness corresponding to a quarter of the thickness of an active layer The laser is constructed symmetrically with respect to the active layer 1 and the proportions x4 and x5 of aluminium contained in the relaxation layers 4, 5 are an intermediate value between x1 and x2. Namely, in order to prevent the waveguide mechanism from being seriously affected, it is required to previously determine the composition and thickness of the relaxation layers 4 and 5 properly for that purpose. In this manner, internal stress due to thermal expansion or dislocation due to mismatching in lattice caused in the active layer 1 can be relieved substantially.
公开日期	1988-04-30
申请日期	1986-10-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73958]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	HATTORI AKIRA,YAMASHITA KOJI. Semiconductor laser. JP1988099589A. 1988-04-30.

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