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	Method for manufacturing photoelectric conversion device
	ARAI, YASUYUKI; YAMAZAKI, SHUNPEI
	2010-06-15
著作权人	SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
专利号	US7736933
国家	美国
文献子类	授权发明
其他题名	Method for manufacturing photoelectric conversion device
英文摘要	To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber.
公开日期	2010-06-15
申请日期	2008-07-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73718]
专题	半导体激光器专利数据库
作者单位	SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
推荐引用方式 GB/T 7714	ARAI, YASUYUKI,YAMAZAKI, SHUNPEI. Method for manufacturing photoelectric conversion device. US7736933. 2010-06-15.

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