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	Method for manufacturing semiconductor optical device
	HANAMAKI, YOSHIHIKO; NISHIDA, TAKEHIRO; TAKADA, MAKOTO; ONO, KENICHI
	2010-03-23
著作权人	MITSUBISHI ELECTRIC CORPORATION
专利号	US7682857
国家	美国
文献子类	授权发明
其他题名	Method for manufacturing semiconductor optical device
英文摘要	A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer, the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by ion implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution.
公开日期	2010-03-23
申请日期	2008-01-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73715]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORPORATION
推荐引用方式 GB/T 7714	HANAMAKI, YOSHIHIKO,NISHIDA, TAKEHIRO,TAKADA, MAKOTO,et al. Method for manufacturing semiconductor optical device. US7682857. 2010-03-23.

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