QQ客服 官方微博 反馈留言

	半導体レーザ素子の製造方法
	河西 秀典; 山本 修; 近藤 正樹; 佐々木 和明; 松本 晃広
	1997-11-28
著作权人	シャープ株式会社
专利号	JP2723649B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子の製造方法
英文摘要	PURPOSE:To simply cleave a protrusion in short time, to easily form an oblique forbidden band width and to manufacture an element with high yield by applying an ultrasonic vibration in solution of sulfur-containing compound to cleave the protrusion, and forming the end face of a resonator. CONSTITUTION:A substrate 11 formed with a protrusion 21 is dipped in solution 26 of sulfur-containing compound in which a beaker 25 is filled, introduced in a water tank 28 of a sonic wave cleaning unit 27, and ultrasonic vibration is applied to the substrate 1 As a result, the protrusion 21 of the substrate 11 is cleaved at a coupling part 22 to form a resonator. Only the substrate 11 is removed, nitrogen gas is sprayed, dried, and introduced into an organic metal thermal decomposing unit. An oblique forbidden band width layer 16 is formed on the bottom and side of the groove including a cleaved surface 23. The Al mixture crystal ratio (x) of the layer 16 is so set as to be gradually increased from the same ratio as an active layer 23 as being farther from the surface of the groove. Accordingly, an excellent boundary is formed between a laminated structure including the active layer and a semiconductor layer, and high reliability is provided even in a high output state.
公开日期	1998-03-09
申请日期	1990-04-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70993]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	河西 秀典,山本 修,近藤 正樹,等. 半導体レーザ素子の製造方法. JP2723649B2. 1997-11-28.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。