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	Semiconductor laser device and manufacture thereof
	KASAI SHUSUKE; MORIMOTO TAIJI; KANEIWA SHINJI; HAYASHI HIROSHI; MIYAUCHI NOBUYUKI; YANO MORICHIKA; SHIOMOTO TAKEHIRO; SASAKI KAZUAKI; MATSUMOTO AKIHIRO; KONDO MASAKI
	1991-10-03
著作权人	シャープ株式会社
专利号	JP1991224284A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device and manufacture thereof
英文摘要	PURPOSE:To manufacture a semiconductor laser device which can effectively suppress its deterioration caused by the heat produced at the light emission edge of the device due to surface re-coupling by forming a film containing S to the end face provided with an AlGaAs active layer so as to largely reduce the surface level of the edge. CONSTITUTION:A laminated body 12 containing an AlGaAs active layer is made to grow on a semiconductor substrate 11 and resistive electrodes 13 and 14 are formed on both surfaces of the body thus formed. Then bars 15 respectively constituted of a plurality of resonator units arranged in the direction perpendicular to the direction of the resonators are formed by cutting the body along the cleavage of the body. Immediately after the cutting, the bars 15 are dipped in, for example, the 10% aqueous solution 20 of (NH4)2S for a period of specific minutes at a room temperature so as to make surface treatment on the cut surface. As a result, films 18 containing S are respectively formed on the edges of the bars 15. Then a reflecting film 17 of an Al2O3 film and another reflecting film having a multilayered structure of Al2O3 and amorphous Si and having a reflectivity of, for example, 95% are respectively formed on the surface- and rear-side edges of each bar 15 after the bar 15 is washed with water and dried. Thereafter, each bar 15 is further cut into pieces and semiconductor laser devices are obtained.
公开日期	1991-10-03
申请日期	1990-02-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70973]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	KASAI SHUSUKE,MORIMOTO TAIJI,KANEIWA SHINJI,et al. Semiconductor laser device and manufacture thereof. JP1991224284A. 1991-10-03.

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