Semiconductor light-emitting device | |
NAGATA MASAYA | |
1991-03-01 | |
著作权人 | SHARP CORP |
专利号 | JP1991048479A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor light-emitting device |
英文摘要 | PURPOSE:To prevent light emitted from each edge surface from being screened by a heat sink and to enable both lights to be utilized effectively by forming the heat sink so that it is not irradiated with light emitted from each edge surface of the mounted semiconductor light-emitting element radially. CONSTITUTION:A semiconductor laser element 10 is mounted to a heat sink 20. This heat sink 20 is for example made of copper (Cu), is cut off and formed so that a vertical surface 22a which is level with a resonator rear edge surface 12 of the semiconductor laser element 10, and is in step shape where a rectangular parallelepiped semiconductor laser element mount part 22 is formed on the side surface of a rectangular parallelepiped supporting part 2 In this manner, since the heat sink where the semiconductor light-emitting element is mounted is in a shape so that the heat sink is irradiated with no light emitted in the opposing directions from each edge surface of the semiconductor light- emitting element, light emitted from each edge surface is not affected by the heat sink and can be utilized effectively so that the utilization range can be expanded drastically. |
公开日期 | 1991-03-01 |
申请日期 | 1989-07-17 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/70938] |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | NAGATA MASAYA. Semiconductor light-emitting device. JP1991048479A. 1991-03-01. |
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