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	Semiconductor device and manufacture thereof
	SADAMASA TETSUO; HIRAYAMA YUZO; FURUYAMA HIDETO
	1989-04-20
著作权人	TOSHIBA CORP
专利号	JP1989102984A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device and manufacture thereof
英文摘要	PURPOSE:To eliminate the difference in level of the surface of an element and to improve the responsiveness in a high speed optical transmission, etc., by providing a second crystalline region formed on a second recess formed on the main face of a high resistance semiconductor substrate to include part of a first crystalline region and a third crystalline region for flattening the recess. CONSTITUTION:A first recess 13a is formed by a selective etching technique on the main face of a high resistance substrate or a semi-insulating substrate 11, and a first semiconductor crystal 14 is so formed as to bury the recess. Then, the first semiconductor crystal and the substrate are partly simultaneously selectively etched to form a second recess 13b, and a second semiconductor crystal 15 is selectively formed along the recess. Thereafter, a third semiconductor crystal 16 is so formed as to bury the second recess on the crystal 15, thereby flattening the main face of the substrate. With this configuration, if the first crystal is, for example, n-type and the second and third crystals are p-type, a p-n junction is formed partly on the main face of the high resistance substrate. Electrodes to be connected to the p-type and n-type semiconductors are wired or pad bonded on the high resistance substrate without difference in level.
公开日期	1989-04-20
申请日期	1987-10-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70799]
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	SADAMASA TETSUO,HIRAYAMA YUZO,FURUYAMA HIDETO. Semiconductor device and manufacture thereof. JP1989102984A. 1989-04-20.

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