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	Optical semiconductor device
	OISHI AKIO; OKAI MAKOTO; TSUJI SHINJI; HIRAO MOTONAO; MATSUMURA HIROYOSHI; HARADA TATSUO
	1988-04-28
著作权人	HITACHI LTD
专利号	JP1988098176A
国家	日本
文献子类	发明申请
其他题名	Optical semiconductor device
英文摘要	PURPOSE:To obtain an optical semiconductor element in which its wavelength characteristic is linearly varied by linearly forming the lattice of diffraction grating not in parallel, and setting intervals between a line perpendicular to one lattice of reference and crossing points of the lattices equally. CONSTITUTION:When a light propagated in a semiconductor layer is coupled with a diffraction grating, a light of wavelength of lambdas = 2.m.n.d (wherein m: natural number, n: effective refractive index of medium, d: period of lattice). Accordingly, when the lattices of the diffraction grating are set not parallel and linearly varied, the period (d) of the lattice is linearly varied. Then, arbitrary one of the formed lattices is considered to be a reference lattice 3, and lines 1, 2 perpendicular thereto are separated at 1 mm. At this time, the interval between a perpendicular line 1 and the crossing points of the lattices are set to 240 nm, and the intervals between a perpendicular line 2 and the crossing points of the lattices are set to 238 nm to be linearly formed. Accordingly, elements are formed at an equal interval in parallel with the lines 1, 2, and when the interval between the elements is set to 500mum, the period of the lattices to be coupled with the elements is varied by 1 mm at an equal interval.
公开日期	1988-04-28
申请日期	1986-10-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70733]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	OISHI AKIO,OKAI MAKOTO,TSUJI SHINJI,et al. Optical semiconductor device. JP1988098176A. 1988-04-28.

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