| Semiconductor light emitting device | |
| HAKAMATA ISAO; SHIMIZU AKIRA; NOJIRI HIDEAKI; HARA TOSHITAMI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI | |
| 1986-07-29 | |
| 著作权人 | CANON INC |
| 专利号 | JP1986168283A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enable to independently drive without crosstalk by composing a semiconductor light emitting element and an electrode material as a pair of a plurality of separated portions. CONSTITUTION:A double hetero waver 11 formed with N-type side and P-type side electrodes 12, 13 is bonded by a brazing material 15 with a gold electrode 14 on an LD mount 16. Such a semiconductor light emitting device is separated into a plurality of portions except part of the mount 16, for example, by wet etching. Since a plurality of semiconductor light emitting elements and electrode materials are separated as pairs electrical, optical and thermal crosstalks are prevented. |
| 公开日期 | 1986-07-29 |
| 申请日期 | 1985-01-21 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70618]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HAKAMATA ISAO,SHIMIZU AKIRA,NOJIRI HIDEAKI,et al. Semiconductor light emitting device. JP1986168283A. 1986-07-29. |
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