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	P-side ohmic electrode for compound semiconductor
	MORI MITSUHIRO; SAITOU KATSUTOSHI; MORI TAKAO; HIRAO MOTONAO; CHIBA KATSUNUMA; IMAI KUNINORI; KATOU HIROSHI; KOBAYASHI MASAMICHI
	1984-01-21
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1984011675A
国家	日本
文献子类	发明申请
其他题名	P-side ohmic electrode for compound semiconductor
英文摘要	PURPOSE:To obtain the P ohmic electrode, heat resistance thereof is high and which is not exfoliated, by providing multilayered structure in which a first layer is made of Cr or Ti, a second layer of Mo or W and a third layer of Au. CONSTITUTION:An N type InGaAsP layer 34 of a conduction type different from a buried layer 32 consisting of P type InP formed to an N type InP substrate 31 is formed to the surface in order to limitedly flow currents through an InGaAsP active layer 33 buried by the buried layer 32, a clad layer 35 consisting of P type InP and a high conduction layer 36 consisting of P type InGaAsP called a cap layer are formed, and an ohmic contact is easy to be obtained. Ti is applied in 50nm thickness was the first metallic layer 38, Mo on the layer 38 in 150nm thickness as the second metallic layer 39 and Au on the layer 39 in 1mum thickness as the third metallic layer 40. The sum of the film thickness of the first layer 38 and the second layer 39 does not exceed 400nm, and these layers are formed to an element with crystalline thickness of 150mum or less. Accordingly, adhesive property is excellent, cracks are not generated, heat resistance is high, and a diffusion to the electrode side of a semiconductor laser crystal and a diffusion into the crystal of Au or a solder material can be inhibited.
公开日期	1984-01-21
申请日期	1982-07-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67888]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	MORI MITSUHIRO,SAITOU KATSUTOSHI,MORI TAKAO,et al. P-side ohmic electrode for compound semiconductor. JP1984011675A. 1984-01-21.

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