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	Semiconductor laser device, and method for producing it
	SCHMID, WOLFGANG
	2004-02-12
著作权人	OSRAM GMBH
专利号	US20040028106A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser device, and method for producing it
英文摘要	A semiconductor laser device, having an epitaxial semiconductor body (40) with a waveguiding layer (22), which contains an active radiation-generating layer (20), a laser-active emitter region (12), disposed in the epitaxial semiconductor body (40) and having a primary direction (30), which essentially corresponds to the exit direction of the laser radiation from the emitter region, and an amplifier region (14), adjoining the emitter region (12) in the semiconductor body (40) in the primary direction (30), for amplifying the laser radiation. The emitter region (12) and the amplifier region (14) form active regions in the semiconductor material. The waveguiding layer (22) is removed in some regions of the semiconductor body (40) outside the active regions (12, 14), in such a way that flanks (18; 32; 36) of the semiconductor body (40) that are produced by the removal form a shallow angle tau with the plane in which lies the waveguiding layer.
公开日期	2004-02-12
申请日期	2003-02-24
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67798]
专题	半导体激光器专利数据库
作者单位	OSRAM GMBH
推荐引用方式 GB/T 7714	SCHMID, WOLFGANG. Semiconductor laser device, and method for producing it. US20040028106A1. 2004-02-12.

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