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	Buried hetero-type semiconductor laser
	KOBAYASHI UICHIROU
	1983-07-02
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1983111388A
国家	日本
文献子类	发明申请
其他题名	Buried hetero-type semiconductor laser
英文摘要	PURPOSE:To reduce the leakage currents of the buried hetero-type semiconductor laser, and to improve temperature characteristics by forming a buried third layer consisting of GaAs onto a buried second layer and forming an electrode extending over the buried third layer and a fourth layer. CONSTITUTION:A first conduction type GaAlAs multilayer second layer 4 is formed to the lower surface of a striped active layer 5 consisting of GaAs, the second conduction type GaAlAs multilayer fourth layer 6 to an upper surface and the first conduction type GaAlAs buried second layers 8 at both sides, and a diffusion layer 11 for improving ohmic property with the electrode is formed to the surface layer section of the multilayer fourth layer 6. The buried third layers 15 consisting of GaAs are formed to the upper surfaces of the buried second layers 8 composed of GaAlAs coating both sides of the striped active layer 5 made of GaAs. The upper surfaces of the buried third layers 15 are made approximately the same height as the upper surface of the multilayer fourth layer 6. The anode electrode 10 consisting of CrAu is formed extending over the upper surfaces of the multilayer fourth layer 6 and the buried third layers 15.
公开日期	1983-07-02
申请日期	1981-12-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67576]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KOBAYASHI UICHIROU. Buried hetero-type semiconductor laser. JP1983111388A. 1983-07-02.

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