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	Wavelength tunable laser and method of formation
	ACKERMAN, DAVID A.; JOHNSON, JOHN E.; LANG, DAVID V.; REYNOLDS, C. LEWIS JR.
	2003-07-10
著作权人	QORVO US, INC.
专利号	US20030128950A1
国家	美国
文献子类	发明申请
其他题名	Wavelength tunable laser and method of formation
英文摘要	A method of increasing the monomolecular recombination and the immunity to noise of a continuously tunable laser is disclosed. A concentration of recombination centers in the range of about 1x1016 cm-3 to about 1x1018 cm-3 in the tuning region of the laser device is achieved by doping the waveguide layer with impurity atoms, by irradiating the waveguide layer with high energy particles or by varying the growth conditions of the waveguide layer to introduce native point defects due to lattice mismatch. This way, the monomolecular recombination is increased and the radiative recombination over low current ranges is reduced. By increasing the monomolecular recombination, the immunity to noise is improved but the tuning efficiency is reduced. Nevertheless, only a minimal effect on the tuning efficiency is noted over high current ranges and, therefore, the overall tuning range is only insignificantly changed.
公开日期	2003-07-10
申请日期	2002-01-07
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67256]
专题	半导体激光器专利数据库
作者单位	QORVO US, INC.
推荐引用方式 GB/T 7714	ACKERMAN, DAVID A.,JOHNSON, JOHN E.,LANG, DAVID V.,et al. Wavelength tunable laser and method of formation. US20030128950A1. 2003-07-10.

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