QQ客服 官方微博 反馈留言

	A method of producing a gallium nitride-type light emitting semiconductor device
	MOTOKI, KENSAKU
	2007-07-04
著作权人	SUMITOMO ELECTRIC INDUSTRIES, LTD.
专利号	EP1804305A1
国家	欧洲专利局
文献子类	发明申请
其他题名	A method of producing a gallium nitride-type light emitting semiconductor device
英文摘要	A method of producing a gallium nitride-type light emitting semiconductor device comprising the steps of growing GaN-type semiconductor epitaxial layers on a (0001) top surface gallium nitride single crystal substrate; forming an electrode on the GaN-type semiconductor epitaxial layers; forming an electrode on a bottom surface of the gallium nitride single crystal substrate; forming scribing lines on the bottom surface of the gallium nitride single crystal substrate along {1-100} planes of the gallium nitride single crystal substrate; cutting the gallium nitride single crystal substrate into chips by cleaving along the scribed lines and obtaining light emitting device chips having sides consisting of {1-100} planes made by natural cleavage.
公开日期	2007-07-04
申请日期	1999-05-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67159]
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式 GB/T 7714	MOTOKI, KENSAKU. A method of producing a gallium nitride-type light emitting semiconductor device. EP1804305A1. 2007-07-04.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。