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	Lasers with quantum wells having high indium and low aluminum with barrier layers having high aluminum and low indium with reduced traps
	JOHNSON, RALPH, H.; TATUM, JIMMY, ALAN; MACINNES, ANDREW, N.; WADE, JEROME, K.; GRAHAM, LUKE, A.
	2013-01-03
著作权人	FINISAR CORPORATION
专利号	WO2012125997A3
国家	世界知识产权组织
文献子类	发明申请
其他题名	Lasers with quantum wells having high indium and low aluminum with barrier layers having high aluminum and low indium with reduced traps
英文摘要	A VCSEL can include: one or more quantum wells having (Al)InGaAs; two or more quantum well barriers having Al(In)GaAs bounding the one or more quantum well layers; and one or more transitional monolayers deposited between each quantum well layer and quantum well barrier, wherein the quantum wells, barriers and transitional monolayers are substantially devoid of traps. The one or more transitional monolayers include GaP, GaAs, and/or GaAsP. Alternatively, the VCSEL can include two or more transitional monolayers of AlInGaAs with a barrier- side monolayer having lower In and higher Al compared to a quantum well side monolayer that has higher In and lower Al.
公开日期	2013-01-03
申请日期	2012-03-19
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66554]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	JOHNSON, RALPH, H.,TATUM, JIMMY, ALAN,MACINNES, ANDREW, N.,et al. Lasers with quantum wells having high indium and low aluminum with barrier layers having high aluminum and low indium with reduced traps. WO2012125997A3. 2013-01-03.

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