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	Double hetero-junction type semiconductor laser
	KINOSHITA KIYOUICHI; SUGII KIYOMASA; NAGANUMA MITSURU; SUZUKI YOSHIFUMI
	1983-07-21
著作权人	NIPPON TELEGRAPH & TELEPHONE
专利号	JP1983122794A
国家	日本
文献子类	发明申请
其他题名	Double hetero-junction type semiconductor laser
英文摘要	PURPOSE:To obtain a laser with extremely small temperature dependance of oscillation wavelength and injection current dependence into an active layer, by alternately laminating the first and second semiconductor layers with different Pb/Sn ratios so that the energy band gap of an active layer, in case of low operational temperature and high operational temperature, varies mutually in reverse relation. CONSTITUTION:On a P type PbTe substrate 1, a P type Pb0.93 Sn0.07 Te clad layer 2, an N type active layer 3 and an N type clad layer 4 are laminated resulting in epitaxial growth, then a groove entering from the layer 4 into the layer 2 is opened in a ring form, and the part surrounded thereby is used as a mesa part. Next, the entire surface is covered with an insulating layer 7, then a window is opened for the mesa part, and an electrode 6 contacted on the mesa part is adhered. In such a constitution, the active layer 3 is constituted of the alternate laminated body with the first semiconductor layer having narrow energy band gap represented in Pb1-x'Snx'Te (0
公开日期	1983-07-21
申请日期	1982-01-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66240]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGRAPH & TELEPHONE
推荐引用方式 GB/T 7714	KINOSHITA KIYOUICHI,SUGII KIYOMASA,NAGANUMA MITSURU,et al. Double hetero-junction type semiconductor laser. JP1983122794A. 1983-07-21.

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