QQ客服 官方微博 反馈留言

	Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
	BOUR, DAVID P.; TAN, MICHAEL R.T.; CHANG, YING-LAN
	2004-08-19
著作权人	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
专利号	US20040161005A1
国家	美国
文献子类	发明申请
其他题名	Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
英文摘要	A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
公开日期	2004-08-19
申请日期	2003-02-18
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66113]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式 GB/T 7714	BOUR, DAVID P.,TAN, MICHAEL R.T.,CHANG, YING-LAN. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices. US20040161005A1. 2004-08-19.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。