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	(Ga,In)(N,As) Laser structures using distributed feedback
	CRAIG, TOMBLING; ALISTAIR, HENDERSON, KEAN; MARTIN, DAVID, DAWSON; ANTHONY, EDWARD, KELLY
	2002-05-29
著作权人	KAMELIAN LIMITED
专利号	GB2369492A
国家	英国
文献子类	发明申请
其他题名	(Ga,In)(N,As) Laser structures using distributed feedback
英文摘要	A lasing structure comprises a distributed feedback grating associated with an active region 312, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area 314. Subsequent annealing of the FIB damage will leave local periodic adjustments 316 to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.
公开日期	2002-05-29
申请日期	2000-11-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66068]
专题	半导体激光器专利数据库
作者单位	KAMELIAN LIMITED
推荐引用方式 GB/T 7714	CRAIG, TOMBLING,ALISTAIR, HENDERSON, KEAN,MARTIN, DAVID, DAWSON,et al. (Ga,In)(N,As) Laser structures using distributed feedback. GB2369492A. 2002-05-29.

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