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	Etching method
	OOKUBO TOMOYUKI; SAWATO HIRONOBU
	1992-11-11
著作权人	SEKIYU SANGYO KASSEIKA CENTER
专利号	JP1992320336A
国家	日本
文献子类	发明申请
其他题名	Etching method
英文摘要	PURPOSE:To develop a method of etching a compound semiconductor primarily compounded of PbS which enables high accuracy selection etching to be carried out and a flat surface free of roughness or discoloration to be created after the etching. CONSTITUTION:This etching method includes a stage (a) which covers a specified region of a compound semiconductor primarily made of PbS with a metal layer, such as gold and a stage (b) which etches the surface portion not covered with the gold by means of an alkali etching solution which includes a complexing agent which forms hydrogen peroxide, Pb and complex (such as alkali metal salt of tartaric acid and sodium hydroxide) and alkali hydroxide. This method is suitable to mesa etching. There are formed cladding layers 3 and 5 made of PbCdSSe on a PbS substrate 1 with a PbS active layer sandwiched, which are provided with a contact layer 6 and an electrode 7 and useful to the preparation of mesa stripe type laser diode in double heterostructure.
公开日期	1992-11-11
申请日期	1991-04-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65915]
专题	半导体激光器专利数据库
作者单位	SEKIYU SANGYO KASSEIKA CENTER
推荐引用方式 GB/T 7714	OOKUBO TOMOYUKI,SAWATO HIRONOBU. Etching method. JP1992320336A. 1992-11-11.

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