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	Vertical cavity surface emitting laser including indium and nitrogen in the active region
	JOHNSON, RALPH, H.
	2003-07-17
著作权人	HONEYWELL INTERNATIONAL INC.
专利号	WO2003058770A2
国家	世界知识产权组织
文献子类	发明申请
其他题名	Vertical cavity surface emitting laser including indium and nitrogen in the active region
英文摘要	Quantum wells and associated barrier layers can be grown to include nitrogen (N), aluminum (AI), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the (1260) to (1650) nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well 11 comprised of InGaAsN; barrier layers (12) sandwiching said at least one quantum well 11; and confinement layers (13) sandwiching said barrier layers (12). Confinement (13) and barrier layers (12) can comprise AIGaAs, GaAsN. Barrier layers (12) can also comprise InGaAsN. Quantum wells 11 can also include Sb. Quantum wells (11) can be developed up to and including 50 ANGSTROM in thickness. Quantum wells (11) can also be developed with a depth of at least 40 meV.
公开日期	2003-07-17
申请日期	2002-12-11
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65133]
专题	半导体激光器专利数据库
作者单位	HONEYWELL INTERNATIONAL INC.
推荐引用方式 GB/T 7714	JOHNSON, RALPH, H.. Vertical cavity surface emitting laser including indium and nitrogen in the active region. WO2003058770A2. 2003-07-17.

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