| Laser diode and method of fabricating the same | |
| LIM, DAE-HO | |
| 2006-05-18 | |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 专利号 | US20060104325A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode and method of fabricating the same |
| 英文摘要 | A laser diode without a ridge and a method of fabricating the same are provided. The laser diode includes an active layer and upper and lower clad layers. A current blocking layer formed of a semiconductor material is formed on the upper clad layer, and a current passing region is formed using doping through the current blocking layer. The current passing region diffuses down into the upper clad layer. Since the laser diode includes no ridge, it can be fabricated in a simple fabrication process at a low production cost. |
| 公开日期 | 2006-05-18 |
| 申请日期 | 2005-09-08 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64882]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | LIM, DAE-HO. Laser diode and method of fabricating the same. US20060104325A1. 2006-05-18. |
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