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	Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer.
	FORSTER THEODOR CH-8800 THALWIL CH; HARDER CHRISTOPH DR. CH-8038 ZUERICH CH; OOSENBRUG ALBERTUS CH-8135 LANGNAU AM ALBIS CH; RUBLOFF GARY W. WACCABUC NEW YORK 10597 US
	1995-10-19
著作权人	INTERNATIONAL BUSINESS MACHINES CORP. ARMONK N.Y. US
专利号	DE69204828D1
国家	德国
文献子类	授权发明
其他题名	Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer.
英文摘要	Method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The basic steps of are: defining the position (17) of the facets (18,19) to be cleaved by scribing marks (13) into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (Ic) defining the lenght of the laser cavities and the distance (Ib) between the facets of neighboring laser diodes; 2. covering the uppermost portion of said layers with an etch mask pattern which covers each laser diode to be made such that it extends over the scribed marks of each laser and provides for etch windows between the scribed marks defining the position of facets of neighboring lasers; 3. etching trenches into an upper portion of said laser structure, the shape and location of said trenches being defined by said etch winddows; 4. partly underetching (16) said upper portion during a second etch step such that said laser facets (18,19) can be defined by cleaving said upper portion along said scribed marks (13) without cleaving the whole laser structure; 5. ultrasonically or mechanically cleaving said upper portions being underetched along said scribed marks providing for facets (18,19) being perpendicular to said layers and the optical axis; 6. separating the laser diodes by cleaving them between neighboring lasers.
公开日期	1995-10-19
申请日期	1992-06-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64808]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORP. ARMONK N.Y. US
推荐引用方式 GB/T 7714	FORSTER THEODOR CH-8800 THALWIL CH,HARDER CHRISTOPH DR. CH-8038 ZUERICH CH,OOSENBRUG ALBERTUS CH-8135 LANGNAU AM ALBIS CH,et al. Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer.. DE69204828D1. 1995-10-19.

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