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	Separate lateral confinement quantum well laser
	COLEMAN, JAMES, J.; SWINT, REUEL, B.; ZEDIKER, MARK, S.
	2003-01-09
著作权人	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
专利号	WO2003003532A1
国家	世界知识产权组织
文献子类	发明申请
其他题名	Separate lateral confinement quantum well laser
英文摘要	A semiconductor quantum well laser having separate lateral confinement of injected carriers and the optical mode. A ridge waveguide (24) is used to confine the optical mode. A buried heterostructure (16/ 22, 18/ 22) confines injected carriers. A preferred embodiment laser of the invention is a layered semiconductor structure including optical confinement layers. A buried heterojunction quantum well (22) within the optical confinement layers (16, 18) is dimensioned and arranged to confine injected carriers during laser operation. A ridge waveguide (24) outside the optical confinement layers is dimensioned and arranged with respect to the buried heterojunction to confine an optical mode during laser operation. An index step created by the buried heterojunction is substantially removed from the optical mode.
公开日期	2003-01-09
申请日期	2002-06-24
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64794]
专题	半导体激光器专利数据库
作者单位	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
推荐引用方式 GB/T 7714	COLEMAN, JAMES, J.,SWINT, REUEL, B.,ZEDIKER, MARK, S.. Separate lateral confinement quantum well laser. WO2003003532A1. 2003-01-09.

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