QQ客服 官方微博 反馈留言

	LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
	CHAKRABORTY, ARPAN; LIN, YOU-DA; NAKAMURA, SHUJI; DENBAARS, STEVEN P.
	2010-12-09
著作权人	THE REGENTS OF THE UNIVERSTY OF CALIFORNIA
专利号	US20100309943A1
国家	美国
文献子类	发明申请
其他题名	LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
英文摘要	A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.
公开日期	2010-12-09
申请日期	2010-06-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64745]
专题	半导体激光器专利数据库
作者单位	THE REGENTS OF THE UNIVERSTY OF CALIFORNIA
推荐引用方式 GB/T 7714	CHAKRABORTY, ARPAN,LIN, YOU-DA,NAKAMURA, SHUJI,et al. LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES. US20100309943A1. 2010-12-09.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。